SSM452 -6 a, -30v, r ds(on) 55m ? p-channel enhancement mode power mosfet elektronische bauelemente 24-jun-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. features ? simple drive requirement ? lower on-resistance ? fast switching marking maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit drain ? source voltage v ds -30 v gate ? source voltage v gs 20 v continuous drain current 3 t a = 25c i d -6.0 a t a = 70c -4.8 a pulsed drain current 1 i dm -20 a total power dissipation p d 2.7 w linear derating factor 0.02 w / c operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal data maximum junction?ambient 3 r ja 45 c / w sot-223 ref. millimete r ref. millimete r min. max. min. max. a 6.20 6.70 g - 0.10 b 6.70 7.30 h - - c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k - - e 4.50 4.70 l 2.30 ref. f 0.60 0.82 m 2.90 3.10 top view 1 2 3 4 a m b d l k f g h j e c ? ? gate ? ? source ? ? drain
SSM452 -6 a, -30v, r ds(on) 55m ? p-channel enhancement mode power mosfet elektronische bauelemente 24-jun-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min typ max unit test condition drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250ua breakdown voltage temperature coefficient bv dss / t j - -0.02 - v / c reference to 25c, i d = -1ma gate threshold voltage v gs(th) -1.0 - -3.0 v v ds = v gs, i d = -250ua forward transconductance g fs - 10 - s v ds = -10v, i d = -5.3a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current (t j = 25c) i dss - - -1 a v ds = -30v, v gs =0v drain-source leakage current (t j = 70c) - - -25 v ds = -24v, v gs =0v drain-source on resistance r ds(on) - 45 55 m ? v gs = -10v, i d = -5.3a - 75 100 v gs = -4.5v, i d = -4.2a total gate charge 2 q g - 9.2 16 nc v gs = -4.5v v ds = -24v i d = -5.3a gate-source charge q gs - 2.8 - gate-drain (?miller?) charge q gd - 5.2 - turn-on delay time 2 t d(on) - 11 - ns v ds = -15v v gs = -10v i d = -1a r g = 6 ? , r d = 15 ? rise time t r - 8 - turn-off delay time t d(off) - 25 - fall time t f - 17 - input capacitance c iss - 507 912 pf v ds = -15v v gs = 0v f= 1mhz output capacitance c oss - 222 - reverse transfer capacitance c rss - 158 - source-drain diode forward on voltage 2 v sd - - -1.2 v v gs = 0v, i s = -2.3a reverse recovery time t rr - 29 - ns v gs = 0v, i s = -5.3a, dl/dt= 100a/ s reverse recovery charge q rr - 20 - nc note: 1. pulse width limited by maximum junction temperature. 2. pulse width Q 300 s, duty cycle Q 2% 3. surface mounted on 1 in 2 copper pad of fr4 board; 120c / w when mounted on min. copper pad.
SSM452 -6 a, -30v, r ds(on) 55m ? p-channel enhancement mode power mosfet elektronische bauelemente 24-jun-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
SSM452 -6 a, -30v, r ds(on) 55m ? p-channel enhancement mode power mosfet elektronische bauelemente 24-jun-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
|
